Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: TVSdiodeDescription: Silicon carbide Schottky diode98391+$41.847210+$39.4462100+$37.6625250+$37.3881500+$37.11371000+$36.80502500+$36.53065000+$36.3591 -
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Category: TVSdiodeDescription: Silicon carbide Schottky diode54421+$39.364510+$37.1059100+$35.4281250+$35.1699500+$34.91181000+$34.62142500+$34.36335000+$34.2020 -
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Category: TVSdiodeDescription: INFINEON IDW40E65D1FKSA1 Fast/ultrafast power diode, single, 650 V, 40 A, 1.35 V, 77 ns, 320 A240610+$11.9448100+$11.3476500+$10.94941000+$10.92952000+$10.84995000+$10.75037500+$10.670710000+$10.6309 -
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Category: TVSdiodeDescription: Diode - General, Power, Switching IGBT Products82605+$14.999450+$14.3584200+$13.9994500+$13.90971000+$13.82002500+$13.71745000+$13.65337500+$13.5892 -
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Category: Schottky diodeDescription: INFINEON IDW20G65C5FKSA1 Diode, silicon carbide Schottky, SIC, thinQ 5G 650V series, single, 650 V, 20 A, 29 nC, TO-24790451+$58.041510+$54.7113100+$52.2374250+$51.8568500+$51.47621000+$51.04802500+$50.66745000+$50.4295 -
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Category: TVSdiodeDescription: Infineon **Infineon** The switch transmitter control diodes are Fast 1 and Fast 2 series, as well as 600V/1200V ultra soft diodes. These diodes can work in various applications, such as telecommunications UPS、 Welding and AC DC, ultra soft model can work in motor drive applications up to 30kHz. * * Fast 1 * * _ Diode can switch between 18kHz and 40kHz. 1.35V temperature stable forward voltage is particularly suitable for power factor correction (PFC) topology, Infineon420610+$9.9228100+$9.4267500+$9.09591000+$9.07942000+$9.01325000+$8.93057500+$8.864410000+$8.8313 -
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Category: Schottky diodeDescription: thinQ! Silicon carbide (SiC) Schottky diode, Infineon Infineon thinQ! ™ The 5th generation provides a new thin chip technology for silicon carbide Schottky barrier diodes, which can improve heat resistance. Silicon carbide Schottky diode devices have significant advantages in providing high-voltage power semiconductor characteristics, such as increasing breakdown electric field strength and enhancing thermal conductivity, thereby improving efficiency. The latest generation of products is suitable for telecommunications SMPS and high-end servers, UPS systems, motor drives, solar inverters, as well as PC Silverboxes and lighting applications. Reduced EMI # # # diodes and rectifiers, Infineon84721+$41.849710+$39.4485100+$37.6647250+$37.3903500+$37.11581000+$36.80712500+$36.53275000+$36.3612 -
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Category: TVSdiodeDescription: Fast/ultrafast diode, 650 V, 20 A, dual common cathode, 2.2 V, 30 ns, 60 A63295+$21.893050+$20.9574200+$20.4335500+$20.30251000+$20.17152500+$20.02185000+$19.92837500+$19.8347 -
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Category: Power diodeDescription: IDW20G120C5B Series 1200 V 62A 5th generation ThinQ! ™ SiC Schottky diode TO-247-368131+$55.381910+$52.2043100+$49.8437250+$49.4806500+$49.11741000+$48.70882500+$48.34575000+$48.1187 -
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Category: TVSdiodeDescription: INFINEON IDP08E65D1XKSA1 Standard power diode, single, 650 V, 8 A, 1.35 V, 51 ns, 64 A46775+$4.656225+$4.311350+$4.0698100+$3.9664500+$3.89742500+$3.81115000+$3.776710000+$3.7249 -
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Category: Schottky diodeDescription: thinQ!™ Silicon carbide (SiC) Schottky diode, Infineon Infineon thinQ! ™ The 5th generation provides a new thin chip technology for silicon carbide Schottky barrier diodes, which can improve heat resistance. Infineon thinQ! ™ Schottky diodes have voltage options of 600V, 650V, and 1200V. Infineon 1200V silicon carbide diodes are highly efficient and operate without losses at 1200V. Silicon carbide Schottky diodes provide various functions for high-voltage power semiconductors, such as higher breakdown electric field strength and thermal conductivity, which can provide higher levels of efficiency. This generation of products is suitable for telecommunications SMPS and high-end servers, UPS systems, motor drives, solar inverters, PC Silverboxes, and lighting applications. Reduced EMI # # # diodes and rectifiers, Infineon88095+$5.493225+$5.086350+$4.8014100+$4.6794500+$4.59802500+$4.49625000+$4.455610000+$4.3945 -
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Category: Schottky diodeDescription: The second generation ThinQ! SiC Schottky diode 2nd Generation thinQ! SiC Schottky Diode2220 -
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Category: TVSdiodeDescription: IDH20G65C5 Series 650V 20A 5th generation thinQ! ™ SiC Schottky diode PG-TO-220-235551+$53.394510+$50.3309100+$48.0551250+$47.7049500+$47.35481000+$46.96092500+$46.61085000+$46.3920 -
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Category: Power diodeDescription: IDH10G120C5 Series 1200 V 10A 5th generation ThinQ! ™ SiC Schottky diode TO-220-230195+$25.203050+$24.1259200+$23.5228500+$23.37201000+$23.22122500+$23.04895000+$22.94127500+$22.8335 -
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Category: Power diodeDescription: IDH05G120C5 Series 1200 V 5 A 5th generation ThinQ! ™ SiC Schottky diode TO-220-257215+$18.277750+$17.4966200+$17.0592500+$16.94991000+$16.84052500+$16.71555000+$16.63747500+$16.5593 -
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Category: TVSdiodeDescription: The second generation ThinQ! SiC Schottky diode 2nd Generation thinQ! SiC Schottky Diode27105+$33.269050+$31.8472200+$31.0510500+$30.85201000+$30.65292500+$30.42555000+$30.28337500+$30.1411 -
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Category: TVSdiodeDescription: Schottky diode and rectifier SIC DIODES80781+$49.584510+$46.7395100+$44.6260250+$44.3009500+$43.97571000+$43.60992500+$43.28485000+$43.0816 -
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Category: TVSdiodeDescription: INFINEON IDH04G65C5 Diode, silicon carbide Schottky, thinQ 5G 650V series, single, 650 V, 4 A, 7 nC, TO-220473910+$7.3956100+$7.0258500+$6.77931000+$6.76702000+$6.71775000+$6.65607500+$6.606710000+$6.5821 -
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Category: TVSdiodeDescription: The 2nd Generation ThinQ SiC Schottky Diode396510+$6.1224100+$5.8163500+$5.61221000+$5.60202000+$5.56125000+$5.51027500+$5.469310000+$5.4489 -
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Category: Schottky diodeDescription: thinQ!™ Silicon carbide (SiC) Schottky diode, Infineon Infineon thinQ! ™ The 5th generation provides a new thin chip technology for silicon carbide Schottky barrier diodes, which can improve heat resistance. Infineon thinQ! ™ Schottky diodes have voltage options of 600V, 650V, and 1200V. Infineon 1200V silicon carbide diodes are highly efficient and operate without losses at 1200V. Silicon carbide Schottky diodes provide various functions for high-voltage power semiconductors, such as higher breakdown electric field strength and thermal conductivity, which can provide higher levels of efficiency. This generation of products is suitable for telecommunications SMPS and high-end servers, UPS systems, motor drives, solar inverters, PC Silverboxes, and lighting applications. Reduced EMI # # # diodes and rectifiers, Infineon64925+$26.110950+$24.9950200+$24.3702500+$24.21391000+$24.05772500+$23.87925000+$23.76767500+$23.6560 -
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Category: TVSdiodeDescription: The third generation ThinQ! TM SiC Schottky diode 3rd Generation thinQ! TM SiC Schottky Diode64905+$20.916150+$20.0222200+$19.5217500+$19.39651000+$19.27142500+$19.12845000+$19.03907500+$18.9496 -
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Category: TVSdiodeDescription: thinQ!™ Silicon carbide (SiC) Schottky diode, Infineon Infineon thinQ! ™ The 5th generation provides a new thin chip technology for silicon carbide Schottky barrier diodes, which can improve heat resistance. Infineon thinQ! ™ Schottky diodes have voltage options of 600V, 650V, and 1200V. Infineon 1200V silicon carbide diodes are highly efficient and operate without losses at 1200V. Silicon carbide Schottky diodes provide various functions for high-voltage power semiconductors, such as higher breakdown electric field strength and thermal conductivity, which can provide higher levels of efficiency. This generation of products is suitable for telecommunications SMPS and high-end servers, UPS systems, motor drives, solar inverters, PC Silverboxes, and lighting applications. Reduced EMI # # # diodes and rectifiers, Infineon54905+$27.700950+$26.5171200+$25.8542500+$25.68851000+$25.52272500+$25.33335000+$25.21497500+$25.0966 -
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Category: TVSdiodeDescription: INFINEON IDH08SG60C Diode, silicon carbide Schottky, SIC, thinQ 3G 600V series, single, 600V, 8A, 12 nC, TO-22087135+$17.582850+$16.8314200+$16.4106500+$16.30541000+$16.20022500+$16.08005000+$16.00487500+$15.9297 -
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Category: TVSdiodeDescription: thinQ!™ Silicon carbide (SiC) Schottky diode, Infineon Infineon thinQ! ™ The 5th generation provides a new thin chip technology for silicon carbide Schottky barrier diodes, which can improve heat resistance. Infineon thinQ! ™ Schottky diodes have voltage options of 600V, 650V, and 1200V. Infineon 1200V silicon carbide diodes are highly efficient and operate without losses at 1200V. Silicon carbide Schottky diodes provide various functions for high-voltage power semiconductors, such as higher breakdown electric field strength and thermal conductivity, which can provide higher levels of efficiency. This generation of products is suitable for telecommunications SMPS and high-end servers, UPS systems, motor drives, solar inverters, PC Silverboxes, and lighting applications. Reduced EMI # # # diodes and rectifiers, Infineon315010+$7.4124100+$7.0418500+$6.79471000+$6.78232000+$6.73295000+$6.67127500+$6.621710000+$6.5970 -
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Category: Schottky diodeDescription: thinQ!™ Silicon carbide (SiC) Schottky diode, Infineon Infineon thinQ! ™ The 5th generation provides a new thin chip technology for silicon carbide Schottky barrier diodes, which can improve heat resistance. Infineon thinQ! ™ Schottky diodes have voltage options of 600V, 650V, and 1200V. Infineon 1200V silicon carbide diodes are highly efficient and operate without losses at 1200V. Silicon carbide Schottky diodes provide various functions for high-voltage power semiconductors, such as higher breakdown electric field strength and thermal conductivity, which can provide higher levels of efficiency. This generation of products is suitable for telecommunications SMPS and high-end servers, UPS systems, motor drives, solar inverters, PC Silverboxes, and lighting applications. Reduced EMI # # # diodes and rectifiers, Infineon78895+$19.479350+$18.6469200+$18.1807500+$18.06421000+$17.94762500+$17.81445000+$17.73127500+$17.6479 -
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Category: TVSdiodeDescription: INFINEON IDW16G65C5 Diode, silicon carbide Schottky, thinQ 5G 650V series, single, 650 V, 16 A, 23 nC, TO-24739285+$13.400050+$12.8274200+$12.5067500+$12.42651000+$12.34632500+$12.25475000+$12.19747500+$12.1402 -
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Category: Small signal diodeDescription: Fast Switching EmCon Diode72185+$14.326750+$13.7144200+$13.3715500+$13.28581000+$13.20012500+$13.10225000+$13.04097500+$12.9797 -
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Category: Schottky diodeDescription: INFINEON IDP40E65D2 Standard power diode, single, 650 V, 40 A, 1.6 V, 36 ns, 250 A543410+$11.5716100+$10.9930500+$10.60731000+$10.58802000+$10.51095000+$10.41447500+$10.337310000+$10.2987 -
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Category: TVSdiodeDescription: Fast/ultrafast diode, 650 V, 28 A, single, 1.7 V, 42 ns, 120 A19185+$5.369025+$4.971350+$4.6929100+$4.5736500+$4.49402500+$4.39465000+$4.354810000+$4.2952 -
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Category: Small signal diodeDescription: Standard recovery diode, 650 V, 150 A, single, 1.7 V, 108 ns, 580 A81025+$22.815050+$21.8400200+$21.2940500+$21.15751000+$21.02102500+$20.86505000+$20.76757500+$20.6700
